Analog Resistive Switching in Reduced Graphene Oxide and Chitosan‐Based Bio‐Resistive Random Access Memory Device for Neuromorphic Computing Applications

Jetty, Prabana and Sahu, Dwipak Prasad and Jammalamadaka, S Narayana (2022) Analog Resistive Switching in Reduced Graphene Oxide and Chitosan‐Based Bio‐Resistive Random Access Memory Device for Neuromorphic Computing Applications. physica status solidi (RRL) – Rapid Research Letters, 16 (2). ISSN 1862-6254

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Abstract

Bio-resistive random access memory (Bio-RRAM) devices are important because they are biocompatible and biodegradable. Herein, analog unipolar resistive switching and bipolar resistive switching in chitosan and reduced graphene oxide + chitosan (RGO+chitosan)-based Bio-RRAM devices are demonstrated, respectively. Endurance and retentivity of the Ag/RGO+chitosan/FTO-based Bio-RRAM device demonstrate good stability and nonvolatile in nature. Conductive atomic force microscope measurements infer the formation of the 1D conduction channels in the device, which further confirms the conduction channel mechanism in the RGO+chitosan-based Bio-RRAM device. Further, synaptic learning rules such as long-term potentiation (LTP), long-term depression, and spike time-dependent plasticity on Ag/RGO+chitosan/FTO-based device are also demonstrated. Estimated relaxation time infers more time for forgetting than learning. These results suggest that Ag/RGO+chitosan/FTO synaptic Bio-RRAM device would indeed be a potential candidate for future neuromorphic computing applications. © 2021 Wiley-VCH GmbH

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IITH Creators:
IITH CreatorsORCiD
Jammalamadaka, S Narayanahttps://orcid.org/0000-0001-9235-7012
Item Type: Article
Additional Information: S.N.J. would like to thank the Indian Institute of Technology, Hyderabad and DST—SERB Core research grant (CRG/2020/003497) for the financial support. P.J. would like to thank CSIR-HRDG for the award of Junior Research Fellowship (JRF).
Uncontrolled Keywords: Artificial synapse; Chitosan; Computing applications; Conduction channel; Neuromorphic computing; Oxygen defect; Potentiation; Random access memory; Reduced graphene oxides; Resistive switching
Subjects: Physics
Physics > Magnetism
Divisions: Department of Physics
Depositing User: . LibTrainee 2021
Date Deposited: 13 Jul 2022 13:21
Last Modified: 13 Jul 2022 13:21
URI: http://raiith.iith.ac.in/id/eprint/9682
Publisher URL: http://doi.org/10.1002/pssr.202100465
OA policy: https://v2.sherpa.ac.uk/id/publication/1870
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