Copper Protection by SAM and Low Temperature Bonding for 3dimentional Integration

Ghosh, T and Dutta, Asudeb and Singh, Shiv Govind (2013) Copper Protection by SAM and Low Temperature Bonding for 3dimentional Integration. In: 2nd International Conference on Materials Science and Technology, ICMST 2013, 11-12, April 2013, Hong Kong; China.

Full text not available from this repository. (Request a copy)


3Dimensional Integration can solve many challenges which are being faced by modern planer integration. The major bottleneck of 3D-Integration are contamination and Copper surface oxidation which is the cause of the requirement of high temperature while bonding. Reduction of this high bonding temperature is the key challenge of 3Dimensional Integration. In this research work we investigate and compare the Copper surface protection characteristic of Self Assembled Monolayer(SAM) of Alkyl Thiol having different Carbon chains(C6,Hexanethiol and C12, Dodecanethiol). We also study the thermal desorption of these SAM layers. SAM can minimize the oxidation of the Copper which acts as a bonding medium. By thermal desorption the pure Copper surface is brought back and exposed. Finally Copper-Copper thermocompression bonding is performed in different conditions and compared

[error in script]
IITH Creators:
IITH CreatorsORCiD
Singh, Shiv Govind
Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: 3dimentional integration; Alkyl thiol; SAM
Subjects: Others > Electricity
Divisions: Department of Electrical Engineering
Depositing User: Team Library
Date Deposited: 24 Nov 2014 06:33
Last Modified: 11 Sep 2017 09:36
Publisher URL:
Related URLs:

Actions (login required)

View Item View Item
Statistics for RAIITH ePrint 922 Statistics for this ePrint Item