Hetero-Interfacial Thermal Resistance Effects on Device Performance of Stacked Gate-All-Around Nanosheet FET

Venkateswarlu, Sankatali and Nayak, Kaushik (2020) Hetero-Interfacial Thermal Resistance Effects on Device Performance of Stacked Gate-All-Around Nanosheet FET. IEEE Transactions on Electron Devices, 67 (10). pp. 4493-4499. ISSN 0018-9383

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Abstract

This article reports that Hetero-interfacial-thermal resistance (HITR) due to phonon scattering and weak electron-phonon coupling at hetero-interfaces, can impact stacked Si gate-all-around (GAA) nanosheet field effect transistor (NSHFET) self-heating effect (SHE) and reliability. We have investigated the HITR of Si/SiO2 and Si/metal-silicides on SHE of vertically stacked Si GAA NSHFET. Our simulation predictions reveal that a very noticeable effect of the HITR of Si/ M0 at front end of line (FEOL) and back end of line (BEOL) interface (FEOL/BEOL) is that the hot-spot location is shifted into the channel away from drain depletion region, which affects the device SHE and degrades device performance. The impact of nanosheet width ( ${W}_{NSH}$ ) and sheets stacking number ( ${N}$ ) on device SHE and drive current degradation with and without HITR effect are also studied. It is revealed that wider nanosheets with lower HITR can be a better device design choice for heat mitigation in high performance logic transistors.

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IITH Creators:
IITH CreatorsORCiD
Venkateswarlu, SankataliUNSPECIFIED
Nayak, KaushikUNSPECIFIED
Item Type: Article
Uncontrolled Keywords: Back end of lines; Device performance; Electron phonon couplings; Front end of lines; High-performance logic; Interfacial thermal resistance; Self-heating effect; Simulation prediction
Subjects: Electrical Engineering
Divisions: Department of Electrical Engineering
Depositing User: . LibTrainee 2021
Date Deposited: 11 Aug 2021 10:43
Last Modified: 11 Aug 2021 10:43
URI: http://raiith.iith.ac.in/id/eprint/8799
Publisher URL: http://doi.org/10.1109/TED.2020.3017567
OA policy: https://v2.sherpa.ac.uk/id/publication/3444
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