Hybrid 2D/0D SnSe2-SnO2 vertical junction based high performance broadband photodetector

Vemula, Manikanta and Veeralingam, Sushmitha and Badhulika, Sushmee (2021) Hybrid 2D/0D SnSe2-SnO2 vertical junction based high performance broadband photodetector. Journal of Alloys and Compounds, 883. p. 160826. ISSN 09258388

Full text not available from this repository. (Request a copy)


Despite their high absorption coefficients, most two-Dimensional (2D) Transition Metal Dichalcogenides (TMDC) based photodetectors have a narrow range of light absorption and employ sophisticated fabrication methods. To overcome this, we propose a 2Dā€“0D hybrid heterojunction-based broadband photodetector with Tin Diselenide (SnSe2)/Tin Oxide (SnO2) hybrid structure to enhance the range of detection and performance of the photodetector. The 2D and 0D nanoparticles were synthesized using a simple, cost-effective, one-step hydrothermal method. Detailed physicochemical characterization studies demonstrate the formation of 2D hexagonal layers of SnSe2 nanoflakes with absorption in visible and near IR regions and rutile tetragonal structure of SnO2 Quantum dots (QDs) with absorption in UV region. The fabricated photodetector shows superior responsivity of 47.9, 16.8, and 6.51 mA/W in UV, VIS, and NIR light with enhanced light-matter interaction. The SnSe2/SnO2 heterostructures demonstrated an efficient interlayer charge transfer due to the strong coupling. The superior performance of the photodetector can be attributed to the sizeable tuning of bandgap upon optical excitation in the bulk heterojunction wherein the photocarriers are injected into the SnSe2 nanoflakes for efficient light absorption in the broadband spectrum. The response time of this device was observed to be 0.5, 0.5, and 0.93 s under the illumination of UV, visible, and NIR lights, respectively. The flexibility studies display excellent robustness and mechanical stability for ~2000 bending cycles at ambient conditions. Hence, due to its flexibility, low power, and low cost, the strategy outlined here is ideal for applications like wearable electronics, flexible security, and surveillance systems.

[error in script]
IITH Creators:
IITH CreatorsORCiD
Vemula, ManikantaUNSPECIFIED
Veeralingam, SushmithaUNSPECIFIED
Badhulika, SushmeeUNSPECIFIED
Item Type: Article
Uncontrolled Keywords: Absorption spectroscopy; Charge transfer; Cost effectiveness; Heterojunctions; Infrared devices; Light absorption; Mechanical stability; Photodetectors; Photons; Schottky barrier diodes; Selenium compounds; Semiconductor quantum dots; Synthesis (chemical); Titanium dioxide; Transition metals
Subjects: Electrical Engineering
Divisions: Department of Electrical Engineering
Depositing User: . LibTrainee 2021
Date Deposited: 04 Aug 2021 07:49
Last Modified: 04 Aug 2021 07:49
URI: http://raiith.iith.ac.in/id/eprint/8654
Publisher URL: http://doi.org/10.1016/j.jallcom.2021.160826
Related URLs:

Actions (login required)

View Item View Item
Statistics for RAIITH ePrint 8654 Statistics for this ePrint Item