Pyramid textured Si{100} surface with low reflectivity in CMOS compatible solution

Gupta, Arti and Pal, Prem and Sharma, Chandra Shekhar (2020) Pyramid textured Si{100} surface with low reflectivity in CMOS compatible solution. Micro & Nano Letters, 15 (15). pp. 1084-1088. ISSN 1750-0443

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et anisotropic etching of Si{100} results in micro-pyramids/hillocks bounded by four {111} planes. These kinds of geometrical structures are needed to reduce the front surface reflectance from silicon by taking multiple internal reflections of the incident ray and thus increase the efficiency of the solar cells. In this work, surface texturing of Si{100} is performed at different temperatures in a very low concentration CMOS compatible tetramethylammonium hydroxide (TMAH) without using any additive and agitation. The present research is aimed to significantly reduce the etching time in an extremely low concentration TMAH to texture the silicon surface for obtaining the lowest possible reflectance. Etching temperature is varied from 80 to 95°C with a step of 5°C. For each temperature, the etching time is also varied from 5 to 40 min with an interval of 5 min, whereas etching concentration is made a fix to 0.5 wt%. Surface morphology with dense and uniform pyramidal structures is achieved on the silicon samples etched at 85°C for 25 min. These samples provide the average solar weighted reflectance (Rsw) of around 10% and the lowest reflectance of 6.7% at 790 nm.

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IITH Creators:
IITH CreatorsORCiD
Sharma, Chandra ShekharUNSPECIFIED
Item Type: Article
Uncontrolled Keywords: Article; chemical procedures; chemical structure; concentration (parameter); particle size; scanning electron microscopy; surface property; temperature; time; wet etching
Subjects: Physics
Divisions: Department of Physics
Depositing User: . LibTrainee 2021
Date Deposited: 19 Jul 2021 04:29
Last Modified: 19 Jul 2021 04:29
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