Effect of ultrathin palladium layer in achieving a low temperature and pressure wafer level aluminum to aluminum bonding

Cheemalamarri, Hemanth Kumar and Bonam, Satish and Vanjari, Siva Rama Krishna and Singh, Shiv Govind (2020) Effect of ultrathin palladium layer in achieving a low temperature and pressure wafer level aluminum to aluminum bonding. Surface Topography: Metrology and Properties, 8 (4). 045008. ISSN 2051-672X

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Metal-Metal diffusion bonding was reassuring for micro electro mechanical system (MEMS) packaging and three dimensional (3D) integration. Despite copper and gold, aluminum (Al) is also proficient for wafer-level bonding due to its CMOS compatibility. As of now, a successful bonding reported with a temperature requirement is >300 °C, due to chemically unwavering surface oxide on the aluminum surface. In this work, a facile method of successful Al-Al bonding at a low temperature and pressure by passivating Al surface with another ultrathin noble metal has been reported. Here, a systematic study for selecting a required optimum ultrathin passivation layer thickness in making the surface to be free from surface oxide formation is provided. Also, looking over in an enhancement of surface morphology and microstructure by varying the thickness of an ultrathin passivation layer. Added to this, after obtaining the required oxide-free surface, we conducted wafer-level thermo-compression bonding for optimizing low temperature (∼250 °C) and pressure (∼3 MPa) by inspecting interface quality and reliability studies. We put forward that the proposed bonding technique is promising to use at the wafer-level, to integrate high-performance chip stack interconnects and facile packaging methods for micro-electro-mechanical systems.

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IITH Creators:
IITH CreatorsORCiD
Cheemalamarri, Hemanth KumarUNSPECIFIED
Vanjari, Siva Rama KrishnaUNSPECIFIED
Singh, Shiv Govindhttp://orcid.org/0000-0001-7319-879X
Item Type: Article
Uncontrolled Keywords: and pressure, low temperature, Metal to Metal bonding, surface passivation, thermo-compression bonding, Aluminum, Aluminum alloys
Subjects: Electrical Engineering
Electrical Engineering > Wireless Communication
Electrical Engineering > Process Control
Electrical Engineering > Power System
Electrical Engineering > Automation & Control Systems
Electrical Engineering > Electrical and Electronic
Electrical Engineering > Instruments and Instrumentation
Divisions: Department of Electrical Engineering
Depositing User: . LibTrainee 2021
Date Deposited: 27 Jul 2022 06:21
Last Modified: 27 Jul 2022 06:21
URI: http://raiith.iith.ac.in/id/eprint/7813
Publisher URL: http://doi.org/10.1088/2051-672X/abbb81
OA policy: https://v2.sherpa.ac.uk/id/publication/24473
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