Experimental Verification of Enhanced Photoluminescence in p-doped GaAs using Fluorescence Lifetime Measurements

Ramya, T A and Jinal, T and Emani, Naresh Kumar and et al, . (2019) Experimental Verification of Enhanced Photoluminescence in p-doped GaAs using Fluorescence Lifetime Measurements. In: Workshop on Recent Advances in Photonics, WRAP, 16-17 December, 2015, Indian Institute of Science (IISc), Bangalore.

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Abstract

The realization of low threshold, room temperature operation of semiconductor NIR nanolasers is still a challenge. Large surface-to-volume ratio of the nanostructures aggravates surface recombination leading to non-radiative decay of excited carriers. P-doping of active material is a viable solution to bring down the lasing threshold without surface passivation. Here, we report an improved quantum yield of p-doped GaAs over intrinsic, with the help of carrier lifetime measurement using FLIM system. We aim to study how the onset of the Auger process affects the PL and carrier lifetime at higher pump fluence.

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IITH Creators:
IITH CreatorsORCiD
Emani, Naresh Kumarhttps://orcid.org/0000-0002-0488-921X
Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Auger recombination, Fluorescence lifetime measurement, p-doping, radiative and non-radiative lifetime, surface recombination, Indexed in Scopus
Subjects: Electrical Engineering
Divisions: Department of Electrical Engineering
Depositing User: Team Library
Date Deposited: 13 Apr 2020 14:08
Last Modified: 13 Apr 2020 14:08
URI: http://raiith.iith.ac.in/id/eprint/7564
Publisher URL: https://doi.org/10.1109/WRAP47485.2019.9013731
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