MEMS components with perfectly protected edges and corners in Si{110} wafers

Pal, Prem and Sato, K and Hida, H (2012) MEMS components with perfectly protected edges and corners in Si{110} wafers. In: Annual Symp. on Micro-Nano Mechatronics and Human Science, MHS 2011, Held Jointly with the Symp. on COE for Education and Research of Micro-Nano Mechatronics, 6-9, November 2012, Nagoya; Japan.

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In this paper, we report a fabrication method for the formation of microelectromechanical systems (MEMS) structures with perfectly protected edges and corners in {110}Si wafers using complementary metal oxide semiconductor (CMOS) compatible tetramethyl-ammonium hydroxide (TMAH) solution. Fabrication method includes two-steps wet etching. The second step of etching is carried out after mask inversion from silicon nitride (Si 3N 4) to silicon dioxide (SiO 2) by local oxidation of silicon (LOCOS) followed by nitride etching. Mask design methodology for the various shapes microstructures whose edges aligned along different directions is briefly discussed

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IITH Creators:
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Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Complementary metal oxide semiconductors; Fabrication method; Local oxidation of silicons; Mask design; Si wafer
Subjects: Physics
Divisions: Department of Physics
Depositing User: Team Library
Date Deposited: 13 Nov 2014 04:19
Last Modified: 10 Nov 2017 06:15
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