Role of polaron hopping in leakage current behavior of a SrTiO3 single crystal

Cao, Y and Bhattacharya, Saswata and Shen, J and Randall, C A and Chen, L Q (2013) Role of polaron hopping in leakage current behavior of a SrTiO3 single crystal. Journal of Applied Physics, 114 (22). pp. 1-7. ISSN 0021-8979

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We studied the ionic/electronic transport and resistance degradation behavior of dielectric oxides by solving the electrochemical transport equations. Here, we took into account the non-periodical boundary conditions for the transport equations using the Chebyshev collocation algorithm. A sandwiched Ni|SrTiO3|Ni capacitor is considered as an example under the condition of 1.0 V, 1.0 μm thickness for SrTiO3 layer, and a temperature of 150 °C. The applied voltage resulted in the migration of ionic defects (oxygen vacancies) from anode towards cathode. The simulated electric potential profile at steady state is in good agreement with the recent experimental observation. We introduced the possibility of polaron-hopping between Ti3+ and Ti4+ at the electrode interface. It is shown that both the oxygen vacancy transport and the polaron-hopping contribute to the resistance degradation of single crystal SrTiO3, which is consistent with the experimental observations.

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IITH Creators:
IITH CreatorsORCiD
Bhattacharya, SaswataUNSPECIFIED
Item Type: Article
Additional Information: The work of Jie Shen is partially supported by NSF DMS- 1215066 and by the Computational Materials and Chemical Sciences Network (CMCSN)
Uncontrolled Keywords: Applied voltages; Chebyshev collocation; Current behaviors; Dielectric oxides; Electrode interface; Polaron hopping; Resistance degradation; Transport equation
Subjects: Materials Engineering > Materials engineering
Divisions: Department of Material Science Engineering
Depositing User: Team Library
Date Deposited: 11 Nov 2014 09:11
Last Modified: 29 Aug 2017 11:33
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