MEMS Components with Perfectly Protected Edges and Comers in Si{110} Wafers

Pal, Prem and Sato, Kazuo and Hida, H and et al, . (2011) MEMS Components with Perfectly Protected Edges and Comers in Si{110} Wafers. In: IEEE International Symposium on MHS & Micro-Nano G-COE, 6-9 November 2011, Nagoya, Japan..

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In this paper, we report a fabrication method for the formation of microelectromechanical systems (MEMS) structures with perfectly protected edges and corners in {110}Si wafers using complementary metal oxide semiconductor (CMOS) compatible tetramethyl-ammonium hydroxide (TMAH) solution. Fabrication method includes two-steps wet etching. The second step of etching is carried out after mask inversion from silicon nitride (Si 3 N 4 ) to silicon dioxide (SiO 2 ) by local oxidation of silicon (LOCOS) followed by nitride etching. Mask design methodology for the various shapes microstructures whose edges aligned along different directions is briefly discussed.

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Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: CMOS integrated circuits, crystal microstructure, elemental semiconductors,etching,masks,micromechanical devices, oxidation,silicon
Subjects: Physics
Divisions: Department of Physics
Depositing User: Library Staff
Date Deposited: 27 Jul 2022 07:06
Last Modified: 27 Jul 2022 07:06
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