Pal, Prem and Sato, Kazuo and Hida, H and et al, .
(2011)
MEMS Components with Perfectly Protected Edges and Comers in Si{110} Wafers.
In: IEEE International Symposium on MHS & Micro-Nano G-COE, 6-9 November 2011, Nagoya, Japan..
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Abstract
In this paper, we report a fabrication method for the formation of microelectromechanical systems (MEMS) structures with perfectly protected edges and corners in {110}Si wafers using complementary metal oxide semiconductor (CMOS) compatible tetramethyl-ammonium hydroxide (TMAH) solution. Fabrication method includes two-steps wet etching. The second step of etching is carried out after mask inversion from silicon nitride (Si 3 N 4 ) to silicon dioxide (SiO 2 ) by local oxidation of silicon (LOCOS) followed by nitride etching. Mask design methodology for the various shapes microstructures whose edges aligned along different directions is briefly discussed.
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| IITH Creators: |
| IITH Creators | ORCiD |
|---|
| Pal, Prem | UNSPECIFIED |
|
| Item Type: |
Conference or Workshop Item
(Paper)
|
| Uncontrolled Keywords: |
CMOS integrated circuits, crystal microstructure, elemental semiconductors,etching,masks,micromechanical devices, oxidation,silicon |
| Subjects: |
Physics |
| Divisions: |
Department of Physics |
| Depositing User: |
Library Staff
|
| Date Deposited: |
27 Jul 2022 07:06 |
| Last Modified: |
27 Jul 2022 07:06 |
| URI: |
http://raiith.iith.ac.in/id/eprint/6350 |
| Publisher URL: |
https://doi.org/10.1109/MHS.2011.6102158 |
| Related URLs: |
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