Characterization of SOI technology based MEMS differential capacitive accelerometer and its estimation of resolution by near vertical tilt angle measurements

Parmar, Yashoda and Gupta, Nidhi and Vanjari, Siva Rama Krishna and et al, . (2020) Characterization of SOI technology based MEMS differential capacitive accelerometer and its estimation of resolution by near vertical tilt angle measurements. Microsystem Technologies, 26 (3). ISSN 0946-7076

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Abstract

This paper discusses the evaluation and testing of MEMS capacitive accelerometer (z-axis sensitive) fabricated using silicon-on-insulator (SOI) wafer. The accelerometer structure consists of highly conductive (p-type, resistivity: 0.001 Ω-cm) silicon proof mass (1000 μm × 1000 μm × 30 μm) suspended by four crab-like L-shaped beams (1150 μm × 30 μm × 30 μm) over Pyrex (7740) glass cavity (5 μm depth). Rest capacitance of the accelerometer structure is found to be ~ 2.1–2.25 pF range. Qualified accelerometer chips are packaged and sealed in lead less ceramic (LCC) package along with capacitive readout circuitry chip. Packaged accelerometer showed a scale factor sensitivity of ~ 47 mV/g in − 17–42 g acceleration range with 3% non-linearity. Corresponding cross-axis sensitivity also measured (2%) in full-scale range. Frequency response of the accelerometer showed a 3 dB bandwidth of 380 Hz. Resolution of the accelerometer is measured by an innovative technique involving inclinometer. Here, the device output is recorded at near vertical mounting tilt angle (θ ~ 90°) of inclinometer. Present accelerometer output can be resolved at the inclinometer measurement at 90° (output: 2.42662 V) and 89° (output: 2.42780 V) which corresponds to an acceleration resolution of ~ 17 mg. © 2019, Springer-Verlag GmbH Germany, part of Springer Nature.

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IITH Creators:
IITH CreatorsORCiD
Vanjari, Siva Rama Krishnahttps://orcid.org/0000-0002-5880-4023 View this author’s ORCID profile
Item Type: Article
Additional Information: The authors would like to thank Director, Solid State Physics Laboratory (DRDO) for her guidance and for the permission to publish this work. The authors also sincerely thank fabrication team of STAR C, Bangalore for their help and support. Help from other colleagues of MEMS and Characterization divisions of SSPL are also acknowledged.
Uncontrolled Keywords: Acceleration resolution; Accelerometer chips; Capacitive accelerometers; Capacitive readout; Cross-axis sensitivity; Innovative techniques; Silicon on insulator wafers; Tilt angle measurement
Subjects: Electrical Engineering
Divisions: Department of Electrical Engineering
Depositing User: Team Library
Date Deposited: 02 Aug 2019 04:03
Last Modified: 27 Oct 2022 09:25
URI: http://raiith.iith.ac.in/id/eprint/5853
Publisher URL: http://doi.org/10.1007/s00542-019-04561-6
OA policy: https://v2.sherpa.ac.uk/id/publication/8114
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