Influence of stabilizing agent on dip coating of Cu 2 ZnSnS 4 thin film

Chaudhari, S and Kannan, P K and Dey, Suhash Ranjan (2017) Influence of stabilizing agent on dip coating of Cu 2 ZnSnS 4 thin film. Thin Solid Films, 636. pp. 144-149. ISSN 0040-6090

Full text not available from this repository. (Request a copy)


In the present study, Cu2ZnSnS4 (CZTS) thin films with different amount of Triethanolamine (0 μl, 30 μl, 150 μl and 300 μl) as a stabilizing agent in 200 ml precursor solution have been synthesized on glass substrate using a simple dip coating technique followed by annealing in nitrogen atmosphere at 300 °C for 1 h with 10 °C/min ramping rate. The influence of different amounts of Triethanolamine (TEA) on CZTS films are assessed through studies on phase formation, structural information, morphology, compositions and band gap energy which are obtained using X-Ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy, Energy Dispersive Spectroscopy and UV–Vis spectroscopy respectively. 30 μl of TEA addition is found to generate void free evenly spread stoichiometric CZTS film with a narrow Raman CZTS vibrational mode at 329 cm− 1 and energy band gap of 1.47 eV.

[error in script]
IITH Creators:
IITH CreatorsORCiD
Dey, Suhash Ranjan
Item Type: Article
Uncontrolled Keywords: Copper zinc tin sulfide; Thin film solar cells; Dip coating; Triethanolamine; Kesterite structure
Subjects: Materials Engineering > Materials engineering
Divisions: Department of Material Science Engineering
Depositing User: Team Library
Date Deposited: 06 Jun 2017 10:34
Last Modified: 07 Sep 2017 07:21
Publisher URL:
OA policy:
Related URLs:

Actions (login required)

View Item View Item
Statistics for RAIITH ePrint 3194 Statistics for this ePrint Item