Investigation of optimum annealing parameters for formation of dip coated Cu2ZnSnS4 thin film

Chaudhari, S and Kannan, P K and Dey, Suhash Ranjan (2016) Investigation of optimum annealing parameters for formation of dip coated Cu2ZnSnS4 thin film. Thin Solid Films, 612. pp. 456-462. ISSN 0040-6090

Full text not available from this repository. (Request a copy)


Cu2ZnSnS4 (CZTS) is most attractive absorber material for inorganic solar cell applications because of its cost effective and ecofriendly nature. To obtain phase pure CZTS film, effects of annealing parameters on synthesis of CZTS thin film are investigated. CZTS films are deposited through dip coating method followed by heat treatment to form crystalline CZTS thin films. Factors influencing the crystallinity, morphology and composition of the films such as annealing temperature, time, rate and atmosphere are studied through X-Ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy and Energy Dispersive X-Ray Spectroscopy. After numerous experiments of synthesis of CZTS in different annealing conditions and its characterization, it is observed that 1.4 eV band gap CZTS thin film of kesterite structure is obtained by annealing the film in nitrogen atmosphere for 60 min at 300 °C with 10 °C/min ramping rate.

[error in script]
IITH Creators:
IITH CreatorsORCiD
Dey, Suhash Ranjan
Item Type: Article
Uncontrolled Keywords: Copper zinc tin sulfide; Absorber layer; Copper tin sulfide; Solar cells; Thin films, photovoltaic devices; Thermal annealing
Subjects: Others > Metallurgy
Materials Engineering > Materials engineering
Divisions: Department of Material Science Engineering
Depositing User: Team Library
Date Deposited: 28 Jun 2016 07:31
Last Modified: 07 Sep 2017 07:22
Publisher URL:
OA policy:
Related URLs:

Actions (login required)

View Item View Item
Statistics for RAIITH ePrint 2489 Statistics for this ePrint Item