Investigation of anodic silicon dioxide thin films for microelectromechanical systems applications

Akarapu, A and Pal, Prem (2015) Investigation of anodic silicon dioxide thin films for microelectromechanical systems applications. Micro and Nano Letters, 9 (12). pp. 830-834. ISSN 1750-0443

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In this reported work, silicon dioxide (SiO2) thin films have been developed at room temperature using anodic oxidation of silicon. The effect of various process parameters on oxide properties including thickness, surface morphology, roughness and so on are investigated to determine the optimal conditions for the growth of SiO2 for applications in microelectromechanical systems (MEMS). A spectroscopic ellipsometry was used to characterise the refractive index and thickness of the as-deposited films. Atomic force microscopy was employed to measure the surface roughness of the oxide films. To fabricate the overhanging micromechanical structures, the etch rate of the as-grown oxide film was studied in 25 wt% tetramethylammonium hydroxide and 10 wt% potassium hydroxide solutions at different temperatures. Finally, the as-grown oxide film is demonstrated for the fabrication of differently shaped MEMS components using an etchant showing minimum oxide etch rate.

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IITH Creators:
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Item Type: Article
Uncontrolled Keywords: Anisotropic etching; Anodic oxidation; Atomic force microscopy; Electromechanical devices; MEMS; Micromechanics; Refractive index; Silica; Silicon oxides; Spectroscopic ellipsometry; Surface roughness; Thin films
Subjects: Physics
Divisions: Department of Physics
Depositing User: Team Library
Date Deposited: 05 May 2015 05:28
Last Modified: 10 Nov 2017 05:54
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