Low power ovonic threshold switching characteristics of thin GeTe6 films using conductive atomic force microscopy

Manivannan, A and S K, Myana and Miriyala, K and Sahu, S and Ramadurai, R (2014) Low power ovonic threshold switching characteristics of thin GeTe6 films using conductive atomic force microscopy. Applied Physics Letters, 105 (243501). pp. 1-5. ISSN 0003-6951

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Minimizing the dimensions of the electrode could directly impact the energy-efficient threshold switching and programming characteristics of phase change memory devices. A ∼12-15 nm AFM probe-tip was employed as one of the electrodes for a systematic study of threshold switching of as-deposited amorphous GeTe6 thin films. This configuration enables low power threshold switching with an extremely low steady state current in the on state of 6-8 nA. Analysis of over 48 different probe locations on the sample reveals a stable Ovonic threshold switching behavior at threshold voltage, VTH of 2.4 ± 0.5 V and the off state was retained below a holding voltage, VH of 0.6 ± 0.1 V. All these probe locations exhibit repeatable on-off transitions for more than 175 pulses at each location. Furthermore, by utilizing longer biasing voltages while scanning, a plausible nano-scale control over the phase change behavior from as-deposited amorphous to crystalline phase was studied.

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IITH Creators:
IITH CreatorsORCiD
Item Type: Article
Additional Information: We acknowledge valuable discussions with S. Murugavel.
Uncontrolled Keywords: Amorphous films; Atomic force microscopy; Conductive films; Electrodes; Energy efficiency; Nanotechnology; Probes; Switching; Threshold voltage Biasing voltages; Conductive atomic force microscopy; Crystalline phase; Energy efficient; Holding voltage; Steady-state currents; Systematic study; Threshold switching
Subjects: Others > Metallurgy
Materials Engineering > Materials engineering
Divisions: Department of Material Science Engineering
Depositing User: Team Library
Date Deposited: 12 Jan 2015 05:46
Last Modified: 12 Jan 2015 05:46
URI: http://raiith.iith.ac.in/id/eprint/1314
Publisher URL: http://dx.doi.org/10.1063/1.4904412
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