Skyrmion based majority logic gate by voltage controlled magnetic anisotropy in a nanomagnetic device

Haldar, Arabinda and Murapaka, Chandrasekhar (2023) Skyrmion based majority logic gate by voltage controlled magnetic anisotropy in a nanomagnetic device. Nanotechnology, 34 (22). p. 225202. ISSN 0957-4484

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Abstract

Magnetic skyrmions are topologically protected spin textures and they are suitable for future logic-in-memory applications for energy-efficient, high-speed information processing and computing technologies. In this work, we have demonstrated skyrmion-based 3 bit majority logic gate using micromagnetic simulations. The skyrmion motion is controlled by introducing a gate that works on voltage controlled magnetic anisotropy. Here, the inhomogeneous magnetic anisotropy behaves as a tunable potential barrier/well that modulates the skyrmion trajectory in the structure for the successful implementation of the majority logic gate. In addition, several other effects such as skyrmion-skyrmion topological repulsion, skyrmion-edge repulsion, spin-orbit torque and skyrmion Hall effect have been shown to govern the logic functionalities. We have systematically presented the robust logic operations by varying the current density, magnetic anisotropy, voltage-controlled gate dimension and geometrical parameters of the logic device. The skyrmion Hall angle is monitored to understand the trajectory and stability of the skyrmion as a function of time in the logic device. The results demonstrate a novel method to achieve majority logic by using voltage controlled magnetic anisotropy which further opens up a new route for skyrmion-based low-power and high-speed computing devices.

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IITH Creators:
IITH CreatorsORCiD
Haldar, Arabindahttps://orcid.org/0000-0002-0490-9719
Murapaka, Chandrasekharhttp://www.orcid.org/0000-0002-0283-7037
Item Type: Article
Uncontrolled Keywords: magnetic skyrmion; majority logic; skyrmion Hall angle; voltage controlled magnetic anisotropy; Computer circuits; Energy efficiency; Geometry; Magnetic anisotropy; Nanomagnetics; Spin Hall effect; Textures; Topology; Energy efficient; Logic in memory; Magnetic skyrmion; Memory applications; Skyrmion hall angle; Skyrmions; Spin textures; Voltage controled magnetic anisotropy; Voltage-controlled; anisotropy; article; current density; logic; motion; simulation; torque; velocity; Logic gates
Subjects: Physics
Materials Engineering > Materials engineering
Materials Engineering > Nanostructured materials, porous materials
Divisions: Department of Material Science Engineering
Department of Physics
Depositing User: Mr Nigam Prasad Bisoyi
Date Deposited: 28 Sep 2023 13:44
Last Modified: 28 Sep 2023 13:44
URI: http://raiith.iith.ac.in/id/eprint/11723
Publisher URL: https://doi.org/10.1088/1361-6528/acbeb3
OA policy: https://v2.sherpa.ac.uk/id/publication/11334
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