Atomistic Modeling to Engineer Ohmic Contacts between Monolayer MoS2 and Transition Metals

Prashant, Kumar and Yerragudi, Pullaiah and Gupta, Dinesh and Nayak, Kaushik (2020) Atomistic Modeling to Engineer Ohmic Contacts between Monolayer MoS2 and Transition Metals. In: 2020 IEEE International Interconnect Technology Conference, IITC 2020, 5 October 2020through 9 October 2020, Virtual, San Jose.

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Abstract

First principle based atomistic simulations are carried out to study the contact interface between monolayer MoS and transition metals. Density functional theory is used to calculate total energy at the contact interface, density of states and effective electrostatic potential to investigate elemental transition metals for Ohmic contact with transition metal dichalcogenides. Interface study of cubic lattice orientation with monolayer MoS reveals that (100) plane for 3d group elements and (110) plane for 4d and 5d group elements exhibit stable configuration for Ohmic contact formation. The electronic density of states reveals the choice of suitable transition metals as appropriate electrode material for ideal Ohmic contact with MoS monolayer, while the effective crystal potential calculation reveal the electronic potential energy discontinuity at the contact interface for engineering lowest Schottky barrier height. © 2020 IEEE.

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IITH Creators:
IITH CreatorsORCiD
Nayak, Kaushikhttps://orcid.org/0000-0001-6583-264X
Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: 2D material TMDC; DFT; DOS; MoS; Ohmic contact
Subjects: Electrical Engineering
Divisions: Department of Electrical Engineering
Depositing User: . LibTrainee 2021
Date Deposited: 26 Oct 2022 09:48
Last Modified: 26 Oct 2022 09:49
URI: http://raiith.iith.ac.in/id/eprint/11054
Publisher URL: http://doi.org/10.1109/IITC47697.2020.9515662
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