Tunable multiferroic and forming-free bipolar resistive switching properties in multifunctional BiFeO3 film by doping engineering

Mohanty, Himadri Nandan and Jena, Anjan Kumar and Yadav, Urvashi and Sahoo, Ajit Kumar and Prasad P., Syam and Mohanty, Jyoti Ranjan (2021) Tunable multiferroic and forming-free bipolar resistive switching properties in multifunctional BiFeO3 film by doping engineering. Journal of Alloys and Compounds, 887. pp. 1-6. ISSN 0925-8388

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The advent of multiferroic-based materials has opened the plethora for high tunable multifunctional materials and ultra-fast operation for future non-volatile memory technology. Multifunctional rhombohedral Bi0.94Y0.06Fe0.95Mn0.05O3 (BYFMO) film is grown on fluorine-doped tin oxide to investigate the electromechanical and resistive switching properties in Ag/BYFMO/FTO RRAM configuration. UV–visible absorbance spectra reveal the semiconducting behavior of BYFMO, and the band-gap is found to be 2.37 eV. The magnetic hysteresis curve manifests the soft ferromagnetic nature by suppressing the spiral spin modulated structure, supported by MFM imaging. The Y-Mn co-doped BFO possesses highly tunable piezoelectric and ferroelectric features with maximum domains preferred along 710 and 1090. Lateral domain growth is observed with the increase in tip bias voltage. The Ag/BYFMO/FTO RRAM shows distinct bipolar resistive switching behavior at the SET (ON), and RESET (OFF) processes are obtained at voltage VSET = +1.7V and VRESET = −2.8V, respectively. The memory window (ON/OFF) between high resistance state and low resistance state is about ~ 100, which can be sustained up to 100 testing cycles and 103s without any degradation, indicating that the BYFMO based device exhibits better endurance and retention properties. Moreover, the resistive switching mechanism of the device can be well explained by space charge limited current conduction, which is well supported by conducting a filamentary model. With excellent piezoelectric and resistive switching performance, the multifunctional BYFMO has enough potential for future non-volatile memory technology. © 2021 Elsevier B.V.

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IITH Creators:
IITH CreatorsORCiD
Mohanty, Jyoti Ranjanhttps://orcid.org/0000-0001-9579-754X
Item Type: Article
Additional Information: H. N. M. and A. K. J. acknowledge IIT Hyderabad for providing research facilities, University Grants Commission (UGC, India) and the Council of Scientific and Industrial Research (CSIR, India) for providing financial support.
Uncontrolled Keywords: Conductive filament; Multiferroic; Piezoelectric; Resistive switching
Subjects: Physics
Divisions: Department of Physics
Depositing User: . LibTrainee 2021
Date Deposited: 06 Oct 2022 12:46
Last Modified: 06 Oct 2022 12:46
URI: http://raiith.iith.ac.in/id/eprint/10821
Publisher URL: http://doi.org/10.1016/j.jallcom.2021.161336
OA policy: https://v2.sherpa.ac.uk/id/publication/13772
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