Improved Photoelectrochemical Performance Of Cu(In,Ga)Se2 Thin Films Prepared By Pulsed Electrodeposition

Mandati, S and Bulusu, V S and Dey, Suhash Ranjan and Joshi, S V (2013) Improved Photoelectrochemical Performance Of Cu(In,Ga)Se2 Thin Films Prepared By Pulsed Electrodeposition. Journal of Renewable and Sustainable Energy, 5. 031602. ISSN 1941-7012

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Solar cells based on polycrystalline Cu(In,Ga)Se2 absorber layers have yielded the highest conversion efficiency among all the thin-film technologies. CIGS thin-films possess large optical absorption coefficient (≈105 cm-1) and a suitable bandgap of ≈ 1.20 eV for an ideal stoichiometry of CuIn0.7Ga0.3Se2. In the present study, Direct Current (DC) and Pulsed Current (PC) electrodeposition techniques are employed to obtain the near ideal stoichiometric CIGS thin-films on a Mo foil using a two electrode system at a constant potential. Deposited films are annealed at 550 °C under Ar atmosphere. Characterization of the annealed CIGS films is performed using SEM-energy dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy, and photoelectrochemistry to study the morphology, stoichiometry, phase constitution, and the photoelectrochemical response. PC deposition offered suitable manipulation of various parameters, which has helped in obtaining a better quality stoichiometric single phase chalcopyrite structured CIGS thin films with the elimination of unwanted secondary phases like Cu2-xSe. An improved photoelectrochemical performance, characteristic of a p-type semiconductor, is observed for the PC deposited CIGS films

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IITH Creators:
IITH CreatorsORCiD
Dey, Suhash Ranjan
Item Type: Article
Additional Information: The authors acknowledge Mr. K. Ramesh Reddy from ARCI for his support during X-ray diffraction measurement of the samples.
Subjects: Materials Engineering > Materials engineering
Divisions: Department of Material Science Engineering
Depositing User: Team Library
Date Deposited: 27 Nov 2014 09:14
Last Modified: 07 Sep 2017 08:58
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