A Facile Way of Surface Texturing of Si{100} using KOH for Silicon Solar Cells

Gupta, Arti and Pal, Prem and Sharma, Chandra Shekhar (2021) A Facile Way of Surface Texturing of Si{100} using KOH for Silicon Solar Cells. In: 2021 Symposium on Design, Test, Integration and Packaging of MEMS and MOEMS, DTIP 2021, 25 August 2021 through 27 August 2021, Paris.

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Wet etching of Si{100} in an alkaline solution result in pyramidal structures, mostly bounded by four {111} planes. Such geometrical structures work as excellent light trapping structures and potentially help in the efficiency increment of solar cells. In this work, the effect of very low concentration potassium hydroxide (KOH) on the etched surface morphology of Si{100} is systematically studied. KOH concentration is varied from 1.0 to 0.1 wt% KOH in a step of 0.5 wt% to investigate the effect of etching concentration. Wet etching is carried at a fixed temperature of 70°C for 5 to 40 min of etching time. Samples are taken for investigation after every 5 minutes of interval. The lowest reflectance of around 12 % is measured on the samples textured in 0.5 wt% KOH for 10 min. © 2021 IEEE.

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IITH Creators:
IITH CreatorsORCiD
Pal, Premhttps://orcid.org/0000-0001-7345-9769
Sharma, Chandra Shekharhttps://orcid.org/0000-0003-3821-1471
Item Type: Conference or Workshop Item (Paper)
Additional Information: This work is supported by the Department of Science and Technology (DST), Science and Engineering Research Board (Project No. EMR/2016/005276), New Delhi, India.
Uncontrolled Keywords: KOH; reflection; solar cell; surface texturing; Wet etching
Subjects: Chemical Engineering
Divisions: Department of Chemical Engineering
Depositing User: . LibTrainee 2021
Date Deposited: 03 Aug 2022 09:53
Last Modified: 03 Aug 2022 09:53
URI: http://raiith.iith.ac.in/id/eprint/10073
Publisher URL: http://doi.org/10.1109/DTIP54218.2021.9568684
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