Nitrogen doping of TiO2 and annealing treatment of photoanode for enhanced solar cell performance

Kumar, P. Naresh and Das, Aparajita and Deepa, Melepurath (2020) Nitrogen doping of TiO2 and annealing treatment of photoanode for enhanced solar cell performance. Journal of Alloys and Compounds, 832. p. 154880. ISSN 09258388

Full text not available from this repository. (Request a copy)

Abstract

Mild doping of nitrogen (N) in TiO2 followed by an optimized aerial annealing treatment of CdS quantum dot (QD) sensitized photoanode resulted in efficient electron transfer and low recombination rates for the corresponding quantum dot solar cell (QDSC). Nitrogen doping passivates the surface defects in TiO2, reduces the density of recombination centers, and promotes electron injection into the current collector. N-doping also modifies the electronic band structure of TiO2 and reduces the band gap from 3.17 to 2.91 eV. Therefore in the QDSC with the N-TiO2/CdS photoanode, both N-TiO2 and CdS, undergo charge separation upon illumination thereby producing a higher photocurrent compared to the undoped-TiO2/CdS based QDSC. N-doping also increased the redox activity of TiO2, allowing facile ion and electron transport across its cross-section which is advantageous for solar cell performance. Optimal annealing temperature of 150 °C for the N-TiO2/CdS or TiO2/CdS photoanode restricted the back electron movement effectively, and imparted a significantly enhanced power conversion efficiency (PCE) to the N-TiO2/CdS@150 °C/polysulfide gel/C-fabric- solar cell, greater by 55% compared to its unannealed counterpart. Lowered average excited electron lifetime, increased-incident photon-to-current conversion efficiency, recombination resistance and photovoltage decay response time, confirm the ability of the annealed photoanodes to undergo enhanced charge separation contrasting with the unannealed photoanode. This first time study relies on two simple approaches of nitrogen doping and annealing treatment to achieve considerably improved photovoltaic parameters, and opens up realistic possibilities for commercialization of QDSCs.

[error in script]
IITH Creators:
IITH CreatorsORCiD
M, DeepaUNSPECIFIED
Item Type: Article
Uncontrolled Keywords: Annealing treatments; Electronic band structure; Incident photon-to-current conversion efficiencies; Photovoltaic parameters; Power conversion efficiencies; Quantum dot solar cells; Recombination centers; Solar cell performance
Subjects: Chemistry
Divisions: Department of Chemistry
Depositing User: . LibTrainee 2021
Date Deposited: 17 Jul 2021 04:46
Last Modified: 14 Mar 2022 06:45
URI: http://raiith.iith.ac.in/id/eprint/8381
Publisher URL: http://doi.org/10.1016/j.jallcom.2020.154880
OA policy: https://v2.sherpa.ac.uk/id/publication/13772
Related URLs:

Actions (login required)

View Item View Item
Statistics for RAIITH ePrint 8381 Statistics for this ePrint Item