Room temperature synthesis of silicon dioxide thin films for MEMS and silicon surface texturing

Akarapu, A and Pal, P (2015) Room temperature synthesis of silicon dioxide thin films for MEMS and silicon surface texturing. In: Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference, 18-22 January, 2015, Estoril, Portugal.

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Abstract

In the present work, the room temperature deposited silicon dioxide thin films are explored for the fabrication of microelectromechanical systems (MEMS) components and the surface texturing for crystalline silicon solar cell applications. The etch rates of as-grown oxide films are investigated in different concentration tetramethylammonium hydroxide (TMAH) and potassium hydroxide (KOH) solutions at different temperatures. In 25 wt% TAMH, the as-grown oxide is demonstrated as structural and masking layers for the fabrication of various kinds of MEMS components. Furthermore, the as-grown oxide is exploited as etch mask in KOH to texturize silicon wafer surface without using lithography.

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IITH Creators:
IITH CreatorsORCiD
Pal, PUNSPECIFIED
Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Etching, Films, Photovoltaic cells, Silicon, Surface morphology, Surface texture,
Subjects: Physics
Divisions: Department of Physics
Depositing User: Team Library
Date Deposited: 25 Nov 2014 10:30
Last Modified: 14 Aug 2017 10:49
URI: http://raiith.iith.ac.in/id/eprint/972
Publisher URL: https://doi.org/10.1109/MEMSYS.2015.7050970
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