Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET

Pullaiah, Y and Emani, Naresh Kumar and Nayak, Kaushik (2020) Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET. In: 4th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference, 16 – 18 March 2020, Penang, Malaysia.

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IITH Creators:
IITH CreatorsORCiD
Emani, Naresh Kumarhttps://orcid.org/0000-0002-0488-921X
Nayak, KaushikUNSPECIFIED
Item Type: Conference or Workshop Item (Paper)
Subjects: Electrical Engineering
Divisions: Department of Electrical Engineering
Depositing User: Team Library
Date Deposited: 24 Dec 2019 09:42
Last Modified: 24 Dec 2019 09:42
URI: http://raiith.iith.ac.in/id/eprint/7248
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