Stress analysis of dynamic silicon diaphragm under low pressure

Samridhi, Samridhi and Kumar, Manish and Singh, Kulwant and et al, . (2019) Stress analysis of dynamic silicon diaphragm under low pressure. In: 63rd DAE Solid State Physics Symposium, 18-22 December 2018, Haryana, India.

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Abstract

This paper reports stress analysis of dynamic Si diaphragm under low pressure (∼21kPa). In this paper, finite element method (FEM) has been adopted within the frame work of COMSOL package in order to simulate displacement and stress profiles of silicon diaphragm at various frequencies. The simulated results show that for the 50 μm Si diaphragm, the fundamental frequency ∼280kHz is suitable and yields maximum and observable displacement and stresses and hence this frequency can be considered very much suitable for piezoresistive pressure sensor.

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IITH Creators:
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Item Type: Conference or Workshop Item (Paper)
Subjects: Electrical Engineering
Divisions: Department of Electrical Engineering
Depositing User: Team Library
Date Deposited: 14 Aug 2019 07:08
Last Modified: 14 Aug 2019 07:08
URI: http://raiith.iith.ac.in/id/eprint/5931
Publisher URL: http://doi.org/10.1063/1.5113303
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