Reliable MOSFET operation using two-phase microfluidics in the presence of high heat flux transients

Singh, S G and Agrawal, A and Duttagupta, S P (2011) Reliable MOSFET operation using two-phase microfluidics in the presence of high heat flux transients. Journal of Micromechanics and Microengineering, 21 (10). ISSN 0960-1317

Full text not available from this repository. (Request a copy)

Abstract

Randomly generated heat flux transients affect the reliability of advanced integrated circuits and can induce severe nonlinearity in the device response, resulting in the degradation of a gate dielectric in metal oxide field effect transistors (MOSFETs). The effect of high heat flux transients on MOSFET operation and mitigation, using single-phase and two-phase on-chip microfluidics, is reported in this paper. A prototype comprising monolithically integrated MOSFETs, resistance temperature detector (RTD) arrays, simulated transient source (microheaters) and microfluidic networks was developed. The application of a 10 s transient (153 W cm-2) led to the degradation of subthreshold swing (S) from 120 to 240 mV/decade. However, in the presence of water flow, effective mitigation of S (up to 75%) is observed. The rate of mitigation is higher at lower flow rates because of the higher heat-transfer efficiency for two-phase flow. Thus, an appropriate selection of flow parameters can lead to optimized cooling. Additionally, we propose a strategy to localize the transient heat sources based on the temperature profiles generated using an on-chip, distributed RTD sensor array. The proposed methodology can be applied in practical integrated circuits for localization and characterization of heat sources leading to modifications in the circuit design or process integration steps.

[error in script]
IITH Creators:
IITH CreatorsORCiD
Singh, S Ghttp://orcid.org/0000-0001-7319-879X
Item Type: Article
Uncontrolled Keywords: Circuit designs; Device response; Flow parameters; Heat sources; High heat flux; Metal oxide field effect transistors; Micro-heaters; Microfluidic networks; Monolithically integrated; MOS-FET; MOSFETs; On chips; On-chip microfluidics; Presence of water; Process integration; Resistance temperature detectors; Severe nonlinearity; Simulated transients; Subthreshold swing; Temperature profiles; Transient heat
Subjects: Electrical Engineering
Physics > Electricity and electronics
Divisions: Department of Electrical Engineering
Depositing User: Team Library
Date Deposited: 30 Oct 2014 05:47
Last Modified: 14 Aug 2017 06:10
URI: http://raiith.iith.ac.in/id/eprint/536
Publisher URL: https://doi.org/10.1088/0960-1317/21/10/105002
OA policy: http://www.sherpa.ac.uk/romeo/issn/0960-1317/
Related URLs:

Actions (login required)

View Item View Item
Statistics for RAIITH ePrint 536 Statistics for this ePrint Item