Ti-fraction-induced electronic and magnetic transformations in titanium oxide films

Xu, Meiling and Zhong, Xin and Lv, Jian and Kanchana, V et. al. (2019) Ti-fraction-induced electronic and magnetic transformations in titanium oxide films. The Journal of Chemical Physics, 150 (15). p. 154704. ISSN 0021-9606

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Abstract

Titanium dioxide has been widely used in modern industrial applications, especially as an effective photocatalyst. Recently, freestanding TiO 2 films with a markedly reduced bandgap of ∼1.8 eV have been synthesized, indicating that the dimension has a considerable influence on the bulk band gap (>∼3 eV) and enhances the adsorption range of visible light. Titanium oxide compounds have various stoichiometries and versatile properties. Therefore, it is very necessary to explore the electronic properties and functionalities of other titanium oxide films with different stoichiometries. Here, we combined structure searches with first-principle calculations to explore candidate Ti-O films with different stoichiometries. In addition to the experimentally synthesized TiO 2 film, the structure searches identified three new energetically and dynamically stable Ti-O films with stoichiometries of Ti 3 O 5 , Ti 3 O 2 , and Ti 2 O. Calculations show that the Ti-O films undergo several interesting electronic transformations as the Ti fraction increases, namely, from a wide-gap semiconductor (TiO 2 , 3.2 eV) to a narrow-gap semiconductor (Ti 3 O 5 , 1.80 eV) and then to metals (Ti 3 O 2 and Ti 2 O) due to the abundance of unpaired Ti-d electrons. In addition to the electronic transformations, we observed nonmagnetic (TiO 2 ) to ferromagnetic (Ti 3 O 5 , Ti 3 O 2 , and Ti 2 O) transformations. Notably, the Ti 3 O 5 film possesses both narrow-gap semiconductive and ferromagnetic properties, with a large magnetic moment of 2.0 μ B per unit cell; therefore, this film has high potential for use in applications such as spintronic devices. The results highlight metal fraction-induced electronic and magnetic transformations in transition metal oxide films and provide an alternative route for the design of new, functional thin-film materials.

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IITH Creators:
IITH CreatorsORCiD
Kanchana, VUNSPECIFIED
Item Type: Article
Subjects: Physics
Divisions: Department of Physics
Depositing User: Team Library
Date Deposited: 20 May 2019 07:11
Last Modified: 20 May 2019 07:11
URI: http://raiith.iith.ac.in/id/eprint/5245
Publisher URL: http://doi.org/10.1063/1.5089697
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