Remote control of resistive switching in TiO2 based resistive random access memory device

Sahu, Dwipak Prasad and Jammalamadaka, S Narayana (2017) Remote control of resistive switching in TiO2 based resistive random access memory device. Scientific Reports, 7 (1). ISSN 2045-2322

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Abstract

We report on the magnetic field control of a bipolar resistive switching in Ag/TiO2/FTO based resistive random access memory device through I–V characteristics. Essentially, in the presence of magnetic field and in the low resistance state, an abrupt change in the resistance of the device demands higher voltage, hinting that residual Lorentz force plays a significant role in controlling the resistance state. Endurance characteristics of the device infer that there is no degradation of the device even after repeated cycling, which ensures that the switching of resistance between ‘off’ and ‘on’ states is reproducible, reversible and controllable. Magnetic field control of ‘on’ and ‘off’ states in endurance characteristics suggest that this device can be controlled in a remote way for multi-bit data storage.

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IITH Creators:
IITH CreatorsORCiD
Jammalamadaka, S NarayanaUNSPECIFIED
Item Type: Article
Subjects: Physics
Divisions: Department of Physics
Depositing User: Team Library
Date Deposited: 22 Apr 2019 08:30
Last Modified: 22 Apr 2019 08:30
URI: http://raiith.iith.ac.in/id/eprint/4983
Publisher URL: http://doi.org/10.1038/s41598-017-17607-4
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