Silicide Based Low Temperature and Low Pressure Bonding of TI/SI for Microfludic and Hermetic Selaling Application

Kumar, C Hemanth and Paul, Nirupam and Bonam, Satish and Vanjari, Siva Rama Krishna and Singh, Shiv Govind and Panigrahi, Asisa Kumar (2018) Silicide Based Low Temperature and Low Pressure Bonding of TI/SI for Microfludic and Hermetic Selaling Application. In: IEEE International Interconnect Technology Conference (IITC), Santa Clara, CA, USA, 4-7 June 2018.

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Abstract

In this work, we have shown and validated bonding of titanium (Ti) coated glass with (100) silicon wafer at lower thermocompression cycle of 377 °C temperature and a nominal contact pressure of 0.15 MPa. Excellent bond strength > 100 MPa and void free interface have been observed using scanning acoustic tomography (SAT), which clearly suggest that optimized temperature-pressure together can provide a superior quality bonding. Furthermore, post-bond dicing was performed in order to validate further the bonding strength which was confirmed by successfully dicing the Glass-Silicon pair without any damage to the bonding interface. This noble, low cost and low temperature simple bonding approach must be useful in hermetic sealing of microfluidic channels for on-chip compatible applications.

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IITH Creators:
IITH CreatorsORCiD
Vanjari, Siva Rama KrishnaUNSPECIFIED
Singh, Shiv Govindhttp://orcid.org/0000-0001-7319-879X
Item Type: Conference or Workshop Item (Paper)
Subjects: Electrical Engineering
Divisions: Department of Electrical Engineering
Depositing User: Team Library
Date Deposited: 01 Apr 2019 06:03
Last Modified: 01 Apr 2019 06:03
URI: http://raiith.iith.ac.in/id/eprint/4933
Publisher URL: http://doi.org/10.1109/IITC.2018.8430450
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