Relation between the work function and Young's modulus of RhSi and estimate of Schottky-barrier height at RhSi/Si interface: An ab-initio study

Niranjan, M K and Waghmare, U V (2012) Relation between the work function and Young's modulus of RhSi and estimate of Schottky-barrier height at RhSi/Si interface: An ab-initio study. Journal of Applied Physics, 112 (9). pp. 1-6. ISSN 0021-8979

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Abstract

Density-functional calculations are performed to explore the relationship between the work function and Young's modulus of RhSi, and to estimate the p-Schottky-barrier height (SBH) at the Si/RhSi(010) interface. It is shown that the Young's modulus and the workfunction of RhSi satisfy the generic sextic relation, proposed recently for elemental metals. The calculated p-SBH at the Si/RhSi interface is found to differ only by 0.04 eV in opposite limits, viz., no-pinning and strong pinning. We find that the p-SBH is reduced as much as by 0.28 eV due to vacancies at the interface.

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IITH Creators:
IITH CreatorsORCiD
Niranjan, M KUNSPECIFIED
Item Type: Article
Uncontrolled Keywords: Ab initio; Density-functional calculations; Elemental metals; Schottky-barrier heights; Young's Modulus
Subjects: Physics
Divisions: Department of Physics
Depositing User: Mr. Siva Shankar K
Date Deposited: 28 Oct 2014 07:08
Last Modified: 14 Aug 2017 07:21
URI: http://raiith.iith.ac.in/id/eprint/437
Publisher URL: https://doi.org/10.1063/1.4761994
OA policy: http://www.sherpa.ac.uk/romeo/issn/0021-8979/
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