Discretely distributed 1D V2O5 nanowires over 2D MoS2 nanoflakes for enhanced broadband flexible photodetector covering Ultraviolet to Near Infrared region

Sahatiya, Parikshit and Reddy, C K and Badhulika, Sushmee (2017) Discretely distributed 1D V2O5 nanowires over 2D MoS2 nanoflakes for enhanced broadband flexible photodetector covering Ultraviolet to Near Infrared region. Journal of Materials Chemistry C. ISSN 2050-7526

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Abstract

While most reports on photodetectors focus on improving the responsivity in one region of electromagnetic spectrum by fabricating 2D materials hybrids, the main issue still remains unaddressed which is the inability to absorb wide range of electromagnetic spectrum. Most photodetectors comprise of p-n heterojunction, where one of the material is responsible for absorbance, having metal contacts on p and n type allows for effective separation of photogenerated carriers. But for a broadband photodetector, both the materials of the heterojunction should participate in the absorbance. In such a case, metal contacts on p and n type will trap either the photogenerated electrons or hole which leads to the failure of the device. In this work, discrete distribution of 1D V2O5 nanowires over 2D MoS2 and metal contacts on MoS2 combinedly enables the device to absorb from ultraviolet to near Infrared region (365 nm to 780nm) wherein V2O5 is responsible for UV-visible absorbance and MoS2absorbs in visible-NIR. Further, taking advantage of local heterojunctions of MoS2-V2O5 for effective separation of photogenerated carriers enables for efficient charge transfer, faster electron transfer rate and highly responsive photodetection. Responsivity of the fabricated device was calculated to be 41.5 mA/W, 65.1 mA/W and 29.4 mA/W for UV, visible and NIR illumination suggesting the device to be more responsive in visible region and was found to be comparable with the photodetectors fabricated using sophisticated cleanroom techniques.. The method provides a new strategy for improving the absorbance range of photodetector by discrete distribution of 1D materials over 2D materials which finds tremendous potential applications in the field of optoelectronics, sensors and photodetectors.

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IITH Creators:
IITH CreatorsORCiD
Badhulika, SushmeeUNSPECIFIED
Item Type: Article
Additional Information: Supplementary Copy also available
Subjects: Electrical Engineering > Instruments and Instrumentation
Divisions: Department of Electrical Engineering
Depositing User: Team Library
Date Deposited: 27 Nov 2017 04:03
Last Modified: 27 Nov 2017 04:03
URI: http://raiith.iith.ac.in/id/eprint/3676
Publisher URL: https://doi.org/10.1039/C7TC05036D
OA policy: http://www.sherpa.ac.uk/romeo/issn/2050-7526/
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