Dual Damascene Compatible, Copper Rich Alloy Based Surface Passivation Mechanism for Achieving Cu-Cu Bonding at 150 Degree C for 3D IC Integration

Panigrahi, A K and Ghosh, T and Vanjari, S R K and Singh, S G (2017) Dual Damascene Compatible, Copper Rich Alloy Based Surface Passivation Mechanism for Achieving Cu-Cu Bonding at 150 Degree C for 3D IC Integration. In: 67thElectronic Components and Technology Conference (ECTC), 30 May-2 June 2017.

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Abstract

n this paper, we demonstrate a low temperature, low pressure wafer level damascene compatible Cu-Cu thermocompression bonding using an optimized ultra-thin Copper-Nickel-Manganese based alloy layer, Manganin as passivation layer. Surface oxidation and roughness are the major bottlenecks in achieving low temperature and low pressure high quality Cu-Cu bonding. Manganin alloy have dual role of protecting Cu surface from oxidation even at higher temperature.

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IITH Creators:
IITH CreatorsORCiD
Singh, S Ghttp://orcid.org/0000-0001-7319-879X
Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Cu-Cu thermocompression bonding, Diffusion bonding, Manganin alloy, Ultra-thin passivation, 3D IC Integration
Subjects: Electrical Engineering
Divisions: Department of Electrical Engineering
Depositing User: Team Library
Date Deposited: 08 Aug 2017 10:18
Last Modified: 08 Aug 2017 10:18
URI: http://raiith.iith.ac.in/id/eprint/3474
Publisher URL: https://doi.org/10.1109/ECTC.2017.127
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