Theoretical investigation of surface states and energetics of PtSi surfaces

Niranjan, Manish K (2016) Theoretical investigation of surface states and energetics of PtSi surfaces. Surface Science, 649. pp. 27-33. ISSN 0039-6028

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Platinum silicide (PtSi) is highly promising material for applications in microelectronic devices. In this article, the surface electronic structure, surface energetics and work functions of stoichiometric and non-stoichiometric PtSi(010) surfaces are explored within the framework of first-principle density functional theory. The surface rumpling is found to be significant only for the top surface layer. The computed values of the rumpling parameter for the top three layers are ~ 11.0%, ~ 0.9% and ~ 1.9%. Further, the interlayer relaxation is found to be largest for the top layer and decreases rapidly for inner layers. Localized surface states are obtained in the valence band at ~ 9.0 eV below the Fermi level. Under rich Pt and Si growth conditions, nonstoichiometric (010) terminations are found to have the lowest surface energies, whereas stoichiometric termination has the lowest surface energy (~ 1.74 J/m2) under mixed conditions. The work function of stoichiometric (010) termination is computed to be 5.15 eV and differ as much as by ± 0.5 eV for nonstoichiometric terminations.

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IITH Creators:
IITH CreatorsORCiD
Niranjan, Manish KUNSPECIFIED
Item Type: Article
Uncontrolled Keywords: Silicide; Surface electronic structure; Surface energies; Work functions; Ab initio calculations
Subjects: Physics
Divisions: Department of Physics
Depositing User: Team Library
Date Deposited: 08 Feb 2016 03:57
Last Modified: 10 Nov 2017 05:38
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