Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability

Bajaj, M and Nayak, K and Gundapaneni, S and Rao, V R (2016) Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability. IEEE Transactions on Nanotechnology. pp. 1-4. ISSN 1536-125X

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Abstract

In this paper, we present a variability-aware 3-D mixed-mode device simulation study of Si Gate-All-Around (GAA) Nanowire MOSFET (NWFET) based 6-T SRAM bit-cell stability and performance considering metal-gate granularity (MGG) induced intrinsic device random fluctuations and quantum corrected room temperature drift-diffusion transport. The impact of MGG contributed intrinsic variability on Si GAA n- and p-NWFETs based SRAM cell Static Noise Margins (SNM), write and read delay time are statistically analyzed. Our statistical simulations predict acceptable stability for the Si NWFET 6-T SRAM cell with V DD downscaling up to 0.5 V. The simulation estimated mean hold SNM values follow a lowering trend with V DD downscaling, similar to the hold SNM experimental data reported in literature for Si GAA NWFET based SRAM arrays. We further show a linear variation in statistical variance of hold SNM with gate metal grain size and work function.

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IITH Creators:
IITH CreatorsORCiD
Nayak, KUNSPECIFIED
Item Type: Article
Uncontrolled Keywords: Gate-all-around SRAM metal gate granularity silicon nanowire FET static noise margin variability work function
Subjects: Others > Engineering technology
Divisions: Department of Electrical Engineering
Depositing User: Library Staff
Date Deposited: 27 Jan 2016 04:25
Last Modified: 27 Jan 2016 04:25
URI: http://raiith.iith.ac.in/id/eprint/2154
Publisher URL: http://dx.doi.org/10.1109/TNANO.2016.2515638
OA policy: http://www.sherpa.ac.uk/romeo/issn/1536-125X/
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