Fabrication and characterization of zinc oxide nanowires for high-sensitivity sensing applications

Paul, B and Sharma, C S and Singh, Shiv Govind and Vanjari, Siva Rama Krishna (2014) Fabrication and characterization of zinc oxide nanowires for high-sensitivity sensing applications. In: IEEE 2nd International Conference on Emerging Electronics (ICEE), Bengalore, 3-6 Dec. 2014.

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Abstract

This paper presents synthesis and characterization of wurtzite-type zinc oxide (ZnO) mesoporous nanowires by a simple, cost-effective, electrospinning technique. The n-type semiconducting nanowires of ZnO were obtained from polyacrylonitrile (PAN) and zinc acetate (ZnAc) in N, N-dimethylformamide (DMF) after calcination treatment at 5500C for 1 hour. The as-synthesized ZnO nanowires were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDX) and photoluminescence spectroscopy. This paper also presents the fabrication of a single zinc oxide (ZnO) nano wire that is precisely positioned between two electrodes. Using a patterned gold microelectrode array fabricated on oxidized silicon wafer as a collector, the polymer nanocomposite wire can be placed between two gold electrodes. Controlled synthesis of a single nanowire between two electrodes is a candidate for high sensitivity sensing applications in the areas of gas sensing and biosensing.

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IITH Creators:
IITH CreatorsORCiD
Singh, Shiv Govindhttp://orcid.org/0000-0001-7319-879X
Vanjari, Siva Rama KrishnaUNSPECIFIED
Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Cost-effective, Electrospinning, Semiconducting, Wurtzite, ZnO
Subjects: Others > Electricity
Others > Engineering technology
Divisions: Department of Electrical Engineering
Depositing User: Team Library
Date Deposited: 22 Sep 2015 08:44
Last Modified: 16 Jan 2019 10:48
URI: http://raiith.iith.ac.in/id/eprint/1947
Publisher URL: https://doi.org/10.1109/ICEmElec.2014.7151162
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