Targeted cooling with CVD diamond and micro-channel to meet 3-D IC heat dissipation challenge

Khan, A A and Patel, S B and Chaturvedi, D and Dutta, A and Singh, S G (2012) Targeted cooling with CVD diamond and micro-channel to meet 3-D IC heat dissipation challenge. In: International Conference on Emerging Electronics (ICEE), 15-17 Dec. 2012, Mumbai.

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Abstract

Thermal simulation of a stack consists of three IC layers bonded “face up” is performed. It is shown that by inserting electrically isolated thermal through silicon via (TTSV) having Cu core and CVD diamond as a liner shell that extends across the layers to substrate, significant temperature reduction up to (103K) 62% can be achieved which also reflected through almost 60% reduction in thermal resistivity. Additionally simple microchannel integration with IC 3 layer and allowed fluid flow through the channel show transient temperature reduction. TTSV is also shown to be effective in mitigating severe heat dissipation issue facing 3-D IC bonded “face down” and logic layer stacked on memory substrate.

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IITH Creators:
IITH CreatorsORCiD
Singh, S Ghttp://orcid.org/0000-0001-7319-879X
Item Type: Conference or Workshop Item (Paper)
Additional Information: The authors acknowledge fruitful discussion with Dr. Chuan Seng Tan.
Uncontrolled Keywords: 3-D IC, CVD Diamond, Heat dissipation, Micro-channel, through silicon via
Subjects: Others > Electricity
Divisions: Department of Electrical Engineering
Depositing User: Team Library
Date Deposited: 10 Sep 2015 09:36
Last Modified: 19 Jul 2017 10:46
URI: http://raiith.iith.ac.in/id/eprint/1930
Publisher URL: https://doi.org/10.1109/ICEmElec.2012.6636254
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