Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio

Das, K C and Ghosh, S P and Tripathy, N and Bose, G and Ashok, A and Pal, P and Kim, D H and Lee, T I and Myoung, J M and Kar, J P (2015) Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio. Journal of Materials Science: Materials in Electronics, 26 (8). pp. 6025-6031. ISSN 0957-4522

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Abstract

In this work, hafnium oxide (HfO2) thin films were deposited on p-type silicon substrate by radio frequency magnetron sputtering at various working pressure ranging from 4 × 10−3 to 1 × 10−2 mbar and Ar/O2 flow ratio from 1:4 to 4:1. The morphological and electrical properties of the sputtered films were investigated and a correlation between the surface and electrical properties of the HfO2 films was established with the variation of sputtering parameters. The evolution of monoclinic structure of the hafnium oxide thin films was observed by XRD studies. The surface of the HfO2 films became rough with the increase in grain size at the sputter pressure of 8 × 10−3 mbar and Ar/O2 gas flow ratio of 1:4. The formation of HfO2 bond was seen from FTIR spectra. The oxide charge density has a lower value for the sputter pressure of 8 × 10−3 mbar and Ar/O2 gas flow ratio of 1:4 due to the evolution of larger grains. The interface charge density was found to be minimum at a sputter pressure of 8 × 10−3 mbar.

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IITH Creators:
IITH CreatorsORCiD
Pal, PUNSPECIFIED
Item Type: Article
Uncontrolled Keywords: Epitaxial growth; Flow of gases; Fourier transform infrared spectroscopy; Hafnium; Hafnium oxides; Interfaces (materials); Magnetron sputtering; Oxide films; Oxides; Thin films Hafnium oxide thin films; Interface charge; Monoclinic structures; Oxide charge density; Radio frequency magnetron sputtering; Sputtering parameters; Surface and interfaces; Working pressures
Subjects: Physics
Materials Engineering > Materials engineering
Divisions: Department of Physics
Depositing User: Team Library
Date Deposited: 03 Jun 2015 10:12
Last Modified: 14 Aug 2017 11:03
URI: http://raiith.iith.ac.in/id/eprint/1552
Publisher URL: https://doi.org/10.1007/s10854-015-3179-9
OA policy: http://www.sherpa.ac.uk/romeo/issn/0957-4522/
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